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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3252 DESCRIPTION *Low Collector Saturation Voltage *Good Linearity of hFE *High Switching Speed *Complement to Type 2SA1288 APPLICATIONS *Various inductance lamp drivers for electrical equipment *Inverters, converters *Power amplifier *Switching regulator, dirver ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww VALUE scs .i 80 V 60 V 6 V 3 A 5 A 30 W UNIT .cn mi e IC ICM Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICBO IEBO hFE fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 1mA; RBE= IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 1.5A; IB= 75mA VCB= 40V; IE= 0 VEB= 4V; IC= 0 MIN 60 80 5 2SC3252 TYP. MAX UNIT V V V 0.4 100 100 280 100 V A A IC= 1A; VCE= 2V hFE Classifications Q 70-140 R 100-200 w w S 140-280 scs .i w IC=1A; VCE= 5V .cn mi e 70 MHz isc Websitewww.iscsemi.cn 2 |
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